Micros sp.j.
W.Kędra i J.Lic
ul. E.Godlewskiego 38
30-198 Kraków
tel.: +48 12 636 95 66
fax.: +48 12 636 93 99
e-mail: biuro@micros.com.pl
| Asynchronous Fast Static RAM Memories, from |  |
| Part number | Package | Organization | Supply Voltage |
| K6R4008C1D-KI10 | SOJ36 | 512k x 8bit | 4.5 ÷ 5.5V |
| K6R4008C1D-UI10 | TSOP2-44 | 512k x 8bit | 4.5 ÷ 5.5V |
| K6R4008V1D-KI10 | SOJ36 | 512k x 8bit | 3.0 ÷ 3.6V |
| K6R4008V1D-UI10 | TSOP2-44 | 512k x 8bit | 3.0 ÷ 3.6V |
| K6R4016C1D-KI10 | SOJ44 | 256k x 16bit | 4.5 ÷ 5.5V |
| K6R4016C1D-UI10 | TSOP2-44 | 256k x 16bit | 4.5 ÷ 5.5V |
| K6R4016V1D-KI10 | SOJ44 | 256k x 16bit | 3.0 ÷ 3.6V |
| K6R4016V1D-UI10 | TSOP2-44 | 256k x 16bit | 3.0 ÷ 3.6V |
The K6R4008x1D and K6R4016x1D are 4Mbit high-speed Static Random Access Memories organized as 512 kwords by 8 bits or 256 kwords by 16 bits. The devices are fabricated using SAMSUNG′s advanced CMOS process. Three controls are required: Chip Select (~CS), Write Enable (~WE) and Output Enable (~OE). Data byte control (~UB, ~LB) is used to access upper/lower byte of the memory organized as 256K x 16-bit.
The devices are particularly well suited for use in high-density high-speed system applications.
Features:
- Density: 4Mbit;
- Organization: x8/x16-bit;
- Access Time: 10ns;
- TTL Compatible Outputs/Inputs;
- Three State Outputs;
- Current consumption:
Active Mode: 75mA max;
Standby Mode: 20mA max (TTL), 5mA max (CMOS);
- Supply Voltage: 3.3/5V;
- Temperature Range: -40÷85°C;
- Package options: SOJ36, SOJ44, TSOP2-44 (400mils wide).
| K6R4008C1D-KI10 K6R4008C1D-UI10 K6R4008V1D-KI10 K6R4008V1D-UI10 |
K6R4016C1D-KI10 K6R4016C1D-UI10 K6R4016V1D-KI10 K6R4016V1D-UI10 |
Package: SOJ36 |
Package: TSOP2-44 |
Package: SOJ44 |
All products are RoHS compliant.
