IGW25N120H3
Symbol Micros:
TIGW25n120h3
Case : TO247
50A; 1200V; 326W; IGBT IGW25N120H3FKSA1
Parameters
Gate charge: | 115nC |
Max. dissipated power: | 326W |
Max. collector current: | 50A |
Max collector current (impulse): | 100A |
Forvard volatge [Vgeth]: | 5,0V ~ 6,5V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Gate charge: | 115nC |
Max. dissipated power: | 326W |
Max. collector current: | 50A |
Max collector current (impulse): | 100A |
Forvard volatge [Vgeth]: | 5,0V ~ 6,5V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Collector-emitter voltage: | 1200V |
Operating temperature (range): | -40°C ~ 175°C |
Gate-emitter voltage: | 20V |
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