IGW40N60H3FKSA1

Symbol Micros: TIGW40n60h3
Contractor Symbol:
Case : TO247
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IGBT 600V 80A 306W
Parameters
Gate charge: 223nC
Max. dissipated power: 306W
Max. collector current: 80A
Max collector current (impulse): 160A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IGW40N60H3FKSA1 RoHS Case style: TO247 Datasheet
In stock:
10 pcs.
Quantity of pcs. 1+ 4+ 15+ 30+ 150+
Net price (EUR) 5,0920 4,1596 3,7224 3,5905 3,4170
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Packaging:
15
Gate charge: 223nC
Max. dissipated power: 306W
Max. collector current: 80A
Max collector current (impulse): 160A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Collector-emitter voltage: 600V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V
Mounting: THT

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