FGA15N120ANTDTU_F109
Symbol Micros:
TFGA15N120antdu
Case : TO 3P
IGBT 1200V 30A 186W
Parameters
| Gate charge: | 180nC |
| Max. dissipated power: | 186W |
| Max. collector current: | 30A |
| Max collector current (impulse): | 45A |
| Forvard volatge [Vgeth]: | 4,5V ~ 8,5V |
| Case: | TO 3P |
| Manufacturer: | ON SEMICONDUCTOR |
| Gate charge: | 180nC |
| Max. dissipated power: | 186W |
| Max. collector current: | 30A |
| Max collector current (impulse): | 45A |
| Forvard volatge [Vgeth]: | 4,5V ~ 8,5V |
| Case: | TO 3P |
| Manufacturer: | ON SEMICONDUCTOR |
| Collector-emitter voltage: | 1200V |
| Operating temperature (range): | -55°C ~ 150°C |
| Gate-emitter voltage: | 20V |
| Mounting: | THT |
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