FGA60N60UFDTU
Symbol Micros:
TFGA60N60ufdtu
Case : TO 3P
IGBT 600V 120A 298W
Parameters
| Gate charge: | 188nC |
| Max. dissipated power: | 298W |
| Max. collector current: | 120A |
| Max collector current (impulse): | 180A |
| Forvard volatge [Vgeth]: | 4,0V ~ 6,5V |
| Case: | TO-3P |
| Manufacturer: | ON SEMICONDUCTOR |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FGA60N60UFDTU RoHS
Case style: TO 3P
In stock:
6 pcs.
| Quantity of pcs. | 1+ | 3+ | 10+ | 30+ | 100+ |
|---|---|---|---|---|---|
| Net price (EUR) | 6,5951 | 5,5982 | 4,9867 | 4,6752 | 4,4860 |
| Gate charge: | 188nC |
| Max. dissipated power: | 298W |
| Max. collector current: | 120A |
| Max collector current (impulse): | 180A |
| Forvard volatge [Vgeth]: | 4,0V ~ 6,5V |
| Case: | TO-3P |
| Manufacturer: | ON SEMICONDUCTOR |
| Collector-emitter voltage: | 600V |
| Operating temperature (range): | -55°C ~ 150°C |
| Gate-emitter voltage: | 20V |
| Mounting: | THT |
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