FGAF40N60SMD

Symbol Micros: TFGAF40N60smd
Contractor Symbol:
Case : TO 3Piso
IGBT 600V 80A 115W
Parameters
Gate charge: 119nC
Max. dissipated power: 115W
Max. collector current: 80A
Max collector current (impulse): 120A
Forvard volatge [Vgeth]: 3,5V ~ 6,0V
Case: TO-3Piso
Collector-emitter voltage: 600V
Manufacturer:: ON-Semicoductor Manufacturer part number: FGAF40N60SMD RoHS Case style: TO 3Piso Datasheet
In stock:
22 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 5,4063 4,5466 4,0298 3,7726 3,6289
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Packaging:
30
Gate charge: 119nC
Max. dissipated power: 115W
Max. collector current: 80A
Max collector current (impulse): 120A
Forvard volatge [Vgeth]: 3,5V ~ 6,0V
Case: TO-3Piso
Collector-emitter voltage: 600V
Manufacturer: ON SEMICONDUCTOR
Operating temperature (range): -55°C ~ 175°C
Gate-emitter voltage: 20V
Mounting: THT