FGH40T120SMD TO-247-3L

Symbol Micros: TFGH40T120smd
Contractor Symbol:
Case : TO247
Single IGBT Transistors 1200V 40A FS2 Trench IGBT; 1.8V ;
Parameters
Gate charge: 370nC
Max. dissipated power: 555W
Max. collector current: 80A
Max collector current (impulse): 160A
Forvard volatge [Vgeth]: 4,9V ~ 7,5V
Case: TO247
Collector-emitter voltage: 1200V
Manufacturer:: ON-Semicoductor Manufacturer part number: FGH40T120SMD RoHS Case style: TO247  
In stock:
12 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 10,6366 9,1419 8,2057 7,7214 7,4386
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Packaging:
30
Gate charge: 370nC
Max. dissipated power: 555W
Max. collector current: 80A
Max collector current (impulse): 160A
Forvard volatge [Vgeth]: 4,9V ~ 7,5V
Case: TO247
Collector-emitter voltage: 1200V
Manufacturer: ON SEMICONDUCTOR
Operating temperature (range): -55°C ~ 175°C
Gate-emitter voltage: 25V
Mounting: THT