FGH40T120SMD-F155

Symbol Micros: TFGH40T120smd-f155
Contractor Symbol:
Case : TO247
Trans IGBT Chip N-CH 1200V 80A 555000mW 3-Pin(3+Tab) TO-247
Parameters
Gate charge: 370nC
Max. dissipated power: 555W
Max. collector current: 80A
Max collector current (impulse): 160A
Forvard volatge [Vgeth]: 4,9V ~ 7,5V
Case: TO247
Collector-emitter voltage: 1200V
         
 
Item available on request
Gate charge: 370nC
Max. dissipated power: 555W
Max. collector current: 80A
Max collector current (impulse): 160A
Forvard volatge [Vgeth]: 4,9V ~ 7,5V
Case: TO247
Collector-emitter voltage: 1200V
Manufacturer: ON SEMICONDUCTOR
Operating temperature (range): -55°C ~ 175°C
Gate-emitter voltage: 25V
Mounting: THT