FGH40T65SPD_F155
Symbol Micros:
TFGH40T65spd
Case : TO247
Single IGBT Transistors 650V 80A 267W
Parameters
| Gate charge: | 35nC |
| Max. dissipated power: | 267W |
| Max. collector current: | 80A |
| Max collector current (impulse): | 120A |
| Forvard volatge [Vgeth]: | 4,0V ~ 7,5V |
| Case: | TO247 |
| Manufacturer: | ON SEMICONDUCTOR |
| Gate charge: | 35nC |
| Max. dissipated power: | 267W |
| Max. collector current: | 80A |
| Max collector current (impulse): | 120A |
| Forvard volatge [Vgeth]: | 4,0V ~ 7,5V |
| Case: | TO247 |
| Manufacturer: | ON SEMICONDUCTOR |
| Collector-emitter voltage: | 650V |
| Operating temperature (range): | -55°C ~ 175°C |
| Gate-emitter voltage: | 20V |
| Mounting: | THT |
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