HGTG10N120BND
Symbol Micros:
THGTG10n120bnd
Case : TO247
35A; 1200V; 298W; IGBT w/ Diode
Parameters
Gate charge: | 150nC |
Max. dissipated power: | 298W |
Max. collector current: | 35A |
Max collector current (impulse): | 80A |
Forvard volatge [Vgeth]: | 6,0V ~ 6,8V |
Case: | TO247 |
Manufacturer: | ON SEMICONDUCTOR |
Gate charge: | 150nC |
Max. dissipated power: | 298W |
Max. collector current: | 35A |
Max collector current (impulse): | 80A |
Forvard volatge [Vgeth]: | 6,0V ~ 6,8V |
Case: | TO247 |
Manufacturer: | ON SEMICONDUCTOR |
Collector-emitter voltage: | 1200V |
Operating temperature (range): | -55°C ~ 150°C |
Gate-emitter voltage: | 20V |
Mounting: | THT |
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