HGTG12N60A4D

Symbol Micros: THGTG12n60a4d
Contractor Symbol:
Case : TO247
54A; 600V; 167W; IGBT w/ Diode
Parameters
Gate charge: 120nC
Max. dissipated power: 167W
Max. collector current: 54A
Max collector current (impulse): 96A
Forvard volatge [Vgeth]: 5,6V
Case: TO247
Collector-emitter voltage: 600V
Manufacturer:: ON-Semicoductor Manufacturer part number: HGTG12N60A4D RoHS Case style: TO247  
In stock:
1 pcs.
Quantity of pcs. 1+ 3+ 9+ 30+ 93+
Net price (EUR) 6,2985 5,3415 4,7946 4,4586 4,2848
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Packaging:
3
Manufacturer:: Fairchild Manufacturer part number: HGTG12N60A4D RoHS Case style: TO247 Datasheet
In stock:
10 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 100+
Net price (EUR) 5,1422 4,7366 4,4887 4,3612 4,2848
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Packaging:
10
Gate charge: 120nC
Max. dissipated power: 167W
Max. collector current: 54A
Max collector current (impulse): 96A
Forvard volatge [Vgeth]: 5,6V
Case: TO247
Collector-emitter voltage: 600V
Manufacturer: ON SEMICONDUCTOR
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: THT