HGTG18N120BND

Symbol Micros: THGTG18n120bnd
Contractor Symbol:
Case : TO247
54A; 1200V; 390W; IGBT w/ Diode
Parameters
Gate charge: 250nC
Max. dissipated power: 390W
Max. collector current: 54A
Max collector current (impulse): 160A
Forvard volatge [Vgeth]: 6,0V ~ 7,0V
Case: TO247
Collector-emitter voltage: 1200V
         
 
Item available on request
Gate charge: 250nC
Max. dissipated power: 390W
Max. collector current: 54A
Max collector current (impulse): 160A
Forvard volatge [Vgeth]: 6,0V ~ 7,0V
Case: TO247
Collector-emitter voltage: 1200V
Manufacturer: ON SEMICONDUCTOR
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: THT