HGTG20N60A4D
Symbol Micros:
THGTG20n60a4d
Case : TO247
70A; 600V; 290W; IGBT w/ Diode
Parameters
| Gate charge: | 210nC |
| Max. dissipated power: | 290W |
| Max. collector current: | 70A |
| Max collector current (impulse): | 280A |
| Forvard volatge [Vgeth]: | 4,5V ~ 7,0V |
| Case: | TO247 |
| Manufacturer: | ON SEMICONDUCTOR |
| Gate charge: | 210nC |
| Max. dissipated power: | 290W |
| Max. collector current: | 70A |
| Max collector current (impulse): | 280A |
| Forvard volatge [Vgeth]: | 4,5V ~ 7,0V |
| Case: | TO247 |
| Manufacturer: | ON SEMICONDUCTOR |
| Collector-emitter voltage: | 600V |
| Operating temperature (range): | -55°C ~ 150°C |
| Gate-emitter voltage: | 20V |
| Mounting: | THT |
Add Symbol
Cancel
All Contractor Symbols