HGTG20N60B3D

Symbol Micros: THGTG20n60b3d
Contractor Symbol:
Case : TO247
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40A; 600V; 165W; IGBT w/ Diode
Parameters
Gate charge: 135nC
Max. dissipated power: 165W
Max. collector current: 40A
Max collector current (impulse): 160A
Forvard volatge [Vgeth]: 3,0V ~ 6,0V
Case: TO247
Manufacturer: ON SEMICONDUCTOR
Manufacturer:: ON-Semicoductor Manufacturer part number: HGTG20N60B3D RoHS Case style: TO247 Datasheet
In stock:
10 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 6,2603 5,3084 4,7247 4,4283 4,2592
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Packaging:
30
Gate charge: 135nC
Max. dissipated power: 165W
Max. collector current: 40A
Max collector current (impulse): 160A
Forvard volatge [Vgeth]: 3,0V ~ 6,0V
Case: TO247
Manufacturer: ON SEMICONDUCTOR
Collector-emitter voltage: 600V
Operating temperature (range): -40°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: THT

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