IGB10N60TATMA1 Infineon Technologies
Symbol Micros:
TIGB10n60t
Case : TO263 (D2PAK)
IGBT 600V 20A 110W TO263-3 TrenchStop -40+175°C
Parameters
| Gate charge: | 62nC |
| Max. dissipated power: | 110W |
| Max. collector current: | 24A |
| Max collector current (impulse): | 30A |
| Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
| Case: | TO263 (D2PAK) |
| Manufacturer: | Infineon Technologies |
| Gate charge: | 62nC |
| Max. dissipated power: | 110W |
| Max. collector current: | 24A |
| Max collector current (impulse): | 30A |
| Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
| Case: | TO263 (D2PAK) |
| Manufacturer: | Infineon Technologies |
| Collector-emitter voltage: | 600V |
| Operating temperature (range): | -40°C ~ 175°C |
| Gate-emitter voltage: | 20V |
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