FGB20N60SF
Symbol Micros:
TFGB20N60sf
Case : TO263 (D2PAK)
IGBT Field Stop 600V 40A 208W
Parameters
| Gate charge: | 65nC |
| Max. dissipated power: | 208W |
| Max. collector current: | 40A |
| Max collector current (impulse): | 60A |
| Forvard volatge [Vgeth]: | 4,0V ~ 6,5V |
| Case: | TO263 (D2PAK) |
| Manufacturer: | ON SEMICONDUCTOR |
| Gate charge: | 65nC |
| Max. dissipated power: | 208W |
| Max. collector current: | 40A |
| Max collector current (impulse): | 60A |
| Forvard volatge [Vgeth]: | 4,0V ~ 6,5V |
| Case: | TO263 (D2PAK) |
| Manufacturer: | ON SEMICONDUCTOR |
| Collector-emitter voltage: | 600V |
| Operating temperature (range): | -55°C ~ 150°C |
| Gate-emitter voltage: | 20V |
| Mounting: | THT |
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