FGH40N60SMD

Symbol Micros: TFGH40N60smd
Contractor Symbol:
Case : TO247
IGBT 600V 80A 349W
Parameters
Gate charge: 119nC
Max. dissipated power: 349W
Max. collector current: 80A
Max collector current (impulse): 120A
Forvard volatge [Vgeth]: 3,5V ~ 6,0V
Case: TO247
Collector-emitter voltage: 600V
         
 
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Item in delivery
Estimated date:
2024-10-31
Quantity of pcs.: 30
Gate charge: 119nC
Max. dissipated power: 349W
Max. collector current: 80A
Max collector current (impulse): 120A
Forvard volatge [Vgeth]: 3,5V ~ 6,0V
Case: TO247
Collector-emitter voltage: 600V
Manufacturer: ON SEMICONDUCTOR
Operating temperature (range): -55°C ~ 175°C
Gate-emitter voltage: 20V
Mounting: THT