FGH40T65SPD_F155
Symbol Micros:
TFGH40T65spd
Case : TO247
Single IGBT Transistors 650V 80A 267W
Parameters
Gate charge: | 35nC |
Max. dissipated power: | 267W |
Max. collector current: | 80A |
Max collector current (impulse): | 120A |
Forvard volatge [Vgeth]: | 4,0V ~ 7,5V |
Case: | TO247 |
Manufacturer: | ON SEMICONDUCTOR |
Gate charge: | 35nC |
Max. dissipated power: | 267W |
Max. collector current: | 80A |
Max collector current (impulse): | 120A |
Forvard volatge [Vgeth]: | 4,0V ~ 7,5V |
Case: | TO247 |
Manufacturer: | ON SEMICONDUCTOR |
Collector-emitter voltage: | 650V |
Operating temperature (range): | -55°C ~ 175°C |
Gate-emitter voltage: | 20V |
Mounting: | THT |
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