FGL40N120ANDTU

Symbol Micros: TFGL40N120andtu
Contractor Symbol:
Case : TO264
IGBT 1200V 64A 500W
Parameters
Gate charge: 330nC
Max. dissipated power: 500W
Max. collector current: 64A
Max collector current (impulse): 160A
Forvard volatge [Vgeth]: 3,5V ~ 7,5V
Case: TO264
Collector-emitter voltage: 1200V
         
 
Item available on request
Gate charge: 330nC
Max. dissipated power: 500W
Max. collector current: 64A
Max collector current (impulse): 160A
Forvard volatge [Vgeth]: 3,5V ~ 7,5V
Case: TO264
Collector-emitter voltage: 1200V
Manufacturer: ON SEMICONDUCTOR
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 25V
Mounting: THT