FGL60N100BNTD
Symbol Micros:
TFGL60N100bntd
Case : TO264
IGBT 1000V 60A 180W
Parameters
| Gate charge: | 275nC |
| Max. dissipated power: | 180W |
| Max. collector current: | 42A |
| Max collector current (impulse): | 200A |
| Forvard volatge [Vgeth]: | 4,0V ~ 7,0V |
| Case: | TO264 |
| Manufacturer: | ON SEMICONDUCTOR |
| Gate charge: | 275nC |
| Max. dissipated power: | 180W |
| Max. collector current: | 42A |
| Max collector current (impulse): | 200A |
| Forvard volatge [Vgeth]: | 4,0V ~ 7,0V |
| Case: | TO264 |
| Manufacturer: | ON SEMICONDUCTOR |
| Collector-emitter voltage: | 1000V |
| Operating temperature (range): | -55°C ~ 150°C |
| Gate-emitter voltage: | 25V |
| Mounting: | THT |
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