HGTG11N120CND

Symbol Micros: THGTG11n120cnd
Contractor Symbol:
Case : TO247
43A; 1200V; 298W; IGBT w/ Diode
Parameters
Gate charge: 150nC
Max. dissipated power: 298W
Max. collector current: 43A
Max collector current (impulse): 80A
Forvard volatge [Vgeth]: 6,0V ~ 6,8V
Case: TO247
Collector-emitter voltage: 1200V
Manufacturer:: ON-Semicoductor Manufacturer part number: HGTG11N120CND RoHS Case style: TO247  
In stock:
38 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 4,0309 3,5818 3,3109 3,1766 3,1002
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Packaging:
30
Gate charge: 150nC
Max. dissipated power: 298W
Max. collector current: 43A
Max collector current (impulse): 80A
Forvard volatge [Vgeth]: 6,0V ~ 6,8V
Case: TO247
Collector-emitter voltage: 1200V
Manufacturer: ON SEMICONDUCTOR
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: THT