2N7002ET1G

Symbol Micros: T2N7002et1g
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Case : SOT23-3
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N-MOSFET 60V 260mA
Parameters
Open channel resistance: 3Ohm
Max. drain current: 310mA
Max. power loss: 420mW
Case: SOT23-3
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: 2N7002ET1G RoHS Case style: SOT23-3 t/r Datasheet
In stock:
3000 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1843 0,0875 0,0492 0,0374 0,0335
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Packaging:
3000
Open channel resistance: 3Ohm
Max. drain current: 310mA
Max. power loss: 420mW
Case: SOT23-3
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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