2N7002H6327XTSA2 Infineon
Symbol Micros:
T2N7002h
Case : SOT363
N-MOSFET 60V 0.3A
Parameters
Open channel resistance: | 4Ohm |
Max. drain current: | 300mA |
Max. power loss: | 500mW |
Case: | SOT363 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Open channel resistance: | 4Ohm |
Max. drain current: | 300mA |
Max. power loss: | 500mW |
Case: | SOT363 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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