BSS214NH6327 Infineon

Symbol Micros: TBSS214n
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Case : SOT23
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N-MOSFET 20V 1.5A 140mΩ 500mW BSS214NH6327XTSA1
Parameters
Open channel resistance: 250mOhm
Max. drain current: 1,5A
Max. power loss: 500mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 20V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 250mOhm
Max. drain current: 1,5A
Max. power loss: 500mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 20V
Transistor type: N-MOSFET
Max. gate-source Voltage: 12V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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