BSS306NH6327 Infineon

Symbol Micros: TBSS306n
Contractor Symbol:
Case : SOT23
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N-MOSFET 30V 2.3A 57mΩ 500mW BSS306NH6327HTSA1
Parameters
Open channel resistance: 93mOhm
Max. drain current: 2,3A
Max. power loss: 500mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSS306NH6327XTSA1 RoHS Case style: SOT23t/r Datasheet
In stock:
1893 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2432 0,1283 0,0996 0,0919 0,0880
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Packaging:
3000
Open channel resistance: 93mOhm
Max. drain current: 2,3A
Max. power loss: 500mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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