BSS316NH6327 Infineon
Symbol Micros:
TBSS316n
Case : SOT23
N-MOSFET 30V 1.4A 160mΩ 500mW BSS316NH6327XTSA1
Parameters
| Open channel resistance: | 280mOhm |
| Max. drain current: | 1,4A |
| Max. power loss: | 500mW |
| Case: | SOT23 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 30V |
| Transistor type: | N-MOSFET |
Item in delivery
Estimated date:
2024-09-30
Quantity of pcs.: 3000
| Open channel resistance: | 280mOhm |
| Max. drain current: | 1,4A |
| Max. power loss: | 500mW |
| Case: | SOT23 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 30V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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