IPN60R1K0PFD7S

Symbol Micros: TIPN60r1k0pfd7s
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Case : SOT223
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CoolMOS MOSFET N-Channel Enhancement Mode 650V 4.7A IPN60R1K0PFDS7SATMA1
Parameters
Open channel resistance: 1,978Ohm
Max. drain current: 4,7A
Max. power loss: 6W
Case: SOT223
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
         
 
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Open channel resistance: 1,978Ohm
Max. drain current: 4,7A
Max. power loss: 6W
Case: SOT223
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -40°C ~ 150°C
Mounting: SMD

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