XPH3R114MC,L1XHQ(O

Symbol Micros: TXPH3R114MC,L1XHQ
Contractor Symbol:
Case : SOP08 Advance (5x5)
Power Field-Effect Transistors MOSFET P-CH 40V 100A(Ta) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5);
Parameters
Open channel resistance: 3,1mOhm
Max. drain current: 100A
Max. power loss: 960mW
Case: SOP08 Advance (5x5)
Manufacturer: Toshiba
Max. drain-source voltage: 40V
Max. drain-gate voltage: 10V
         
 
Item available on request
Open channel resistance: 3,1mOhm
Max. drain current: 100A
Max. power loss: 960mW
Case: SOP08 Advance (5x5)
Manufacturer: Toshiba
Max. drain-source voltage: 40V
Max. drain-gate voltage: 10V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD