600- and 700-volt super junction MOSFETs with high power density

The αMOS5 transistors in 8x8 DFN housings feature a nearly 60% smaller footprint than the D2Pak standard, and their thickness, at 0. 9 mm, is 80% less. Reduced source inductance provides less oscillation at the gate and less turn-on loss (Eon). The Kelvin lead-out on the transistor source further reduces losses during pulse operation. ΑMOS5 transistors encapsulated in 5x6 DFN enclosures occupy 61% less area than transistors in DPak enclosures. They are only 0. 75 mm thick, 67% less than the thickness of DPAK enclosures. As with the DFN 8x8 version, these transistors have the advantage of low source inductance, allowing applications in fast pulse circuits.

 

SYMBOL	DESCRIPTION
AONV210A60	600V, A MOS5 TM N-CHANNEL POWER
AONS660A70F	700V, A MOS5 TM N-CHANNEL POWER
AONS1R6A70	700V, A MOS TM N-CHANNEL POWER T