Unipolar Transistors (results: 6919)
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Transistor type
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Max. drain-source voltage
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Max. drain-gate voltage
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Max. gate-source Voltage
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Open channel resistance
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Max. drain current
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Max. power loss
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Mounting
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Operating temperature (range)
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Case
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Manufacturer
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MOT20N06D TO252 MOT
Tranzystor N-Channel MOSFET; 60V; 20V; 45mOhm; 20A; 31W; -55°C ~ 150°C; ODPOWIEDNIK: IRLR024N; IRLR024NPBF; IRLR024NTRPBF; IRLR024PBF; IRLR024TRPBF;
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Manufacturer:
MOT- Manufacturer part number: MOT20N06D RoHS Case style: TO252 (DPACK) t/r |
In stock:
700 pcs. |
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Packaging: 1000 Quantity (multiple 1) |
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MOT740F TO-220F MOT
Tranzystor N-MOSFET; 400V; 20V; 550mOhm; 5,4A; 40W; -55°C ~ 150°C;
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Manufacturer:
MOT- Manufacturer part number: MOT740F RoHS Case style: TO220iso |
In stock:
200 pcs. |
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Packaging: 50/200 Quantity (multiple 1) |
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MOT3401AA3 SOT23 MOT
Tranzystor P-Channel MOSFET; 30V; 10V; 50mOhm; 4,2A; 1,4W; -55°C~150°C; podobny do: AO3401;
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Manufacturer:
MOT- Manufacturer part number: MOT3401AA3 RoHS Case style: SOT23t/r |
In stock:
3000 pcs. |
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Packaging: 3000 Quantity (multiple 1) |
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MOT2310B2 SOT23 MOT
60V 4A 1.66W 3V@250uA 1 N-Channel SOT-23 MOSFETs ROHS Podobny do: SI2308BDS-T1-E3; RC2310A; MOT2310B2; LGE2308; YFW3N06; TSM2308CX RFG;
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Manufacturer:
MOT- Manufacturer part number: MOT2310B2 RoHS Case style: SOT23t/r |
In stock:
3000 pcs. |
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Packaging: 3000 Quantity (multiple 1) |
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MOT8205S SOT23 MOT
N-CHANNEL ENHACEMENT; VDSS 20V; RDS 19mOhm; ID 6A; VDSS 20V; TEMP.-55~150°C; ODPOWIEDNIK: TSM2302CX; MOT8205SA6;
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Manufacturer:
MOT- Manufacturer part number: MOT8205SA6 RoHS Case style: SOT23t/r |
In stock:
3000 pcs. |
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Packaging: 3000 Quantity (multiple 1) |
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Manufacturer:
REALCHIP Manufacturer part number: BSS123 RoHS Case style: SOT23t/r |
In stock:
3000 pcs. |
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Packaging: 3000 Quantity (multiple 10) |
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Manufacturer:
REALCHIP Manufacturer part number: BSS84K RoHS Case style: SOT23t/r |
In stock:
3000 pcs. |
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Packaging: 3000 Quantity (multiple 10) |
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RC2300A SOT23 REALCHIP
Tranzystor N-Channel MOSFET; 20V; 8V; 82mOhm; 2,3A; 500mW; -55°C ~ 150°C; Odpowiednik: BSS806NEH6327XTSA1; BSS806NEH6327;
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Manufacturer:
REALCHIP Manufacturer part number: RC2300A RoHS Case style: SOT23t/r |
In stock:
3000 pcs. |
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Packaging: 3000 Quantity (multiple 10) |
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RC4812 SOP-8 REALCHIP
ODPOWIEDNIK: IRF9956TRPBF;
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Manufacturer:
REALCHIP Manufacturer part number: RC4812 RoHS Case style: SOP08t/r |
In stock:
1000 pcs. |
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Packaging: 1000 Quantity (multiple 1) |
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Manufacturer:
REALCHIP Manufacturer part number: RC4816 RoHS Case style: SOP08t/r |
In stock:
1000 pcs. |
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Packaging: 1000 Quantity (multiple 1) |
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Manufacturer:
REALCHIP Manufacturer part number: RC4828 RoHS Case style: SOP08t/r |
In stock:
1000 pcs. |
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Packaging: 1000 Quantity (multiple 1) |
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RC3422 SOT23-3 RealChip
Tranzystor N-Channel MOSFET; 55V; 12V; 210mOhm; 2,1A; 1,25W; -55°C ~ 150°C;
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Manufacturer:
REALCHIP Manufacturer part number: RC3422 RoHS Case style: SOT23-3 t/r |
In stock:
500 pcs. |
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Packaging: 500 Quantity (multiple 1) |
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RC4406A SOP-8 RealChip
ODPOWIEDNIK: IRF7403TRPBF; IRF7201TRPBF;
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Manufacturer:
REALCHIP Manufacturer part number: RC4406A RoHS Case style: SOP08Wt/r |
In stock:
500 pcs. |
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Packaging: 500 Quantity (multiple 1) |
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RC3407 SOT23-3 REALCHIP
Transistor P-Channel MOSFET; 30V; 20V; 78mOhm; 4,3A; 1,4W; -55°C ~ 150°C; AO3407A;
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Manufacturer:
REALCHIP Manufacturer part number: RC3407 RoHS Case style: SOT23t/r |
In stock:
3000 pcs. |
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Packaging: 3000 Quantity (multiple 1) |
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AO3400 XBLW
Transistor N-Channel MOSFET; 30V; 12V; 59mOhm; 5,8A; 1,4W; -55°C ~ 150°C; Equivalent: AO3400 Alpha&Omega Semiconductor AOS; SL3400; YJL3400B;
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In stock:
3000 pcs. |
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Packaging: 3000 Quantity (multiple 1) |
N-MOSFET | 30V | 12V | 55mOhm | 5,8A | 1,4W | SMD | -55°C ~ 150°C | SOT23 | XBLW | |||||||||||||
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AO4832 SOP8 XBLW
Tranzystor 2xN-Channel MOSFET; 30V; 20V; 19mOhm; 10A; 2W; -55°C ~ 150°C;
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Manufacturer:
XBLW Manufacturer part number: AO4832 RoHS Case style: SOP08t/r |
In stock:
1000 pcs. |
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Packaging: 1000 Quantity (multiple 1) |
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2N7002KD SOT-363(T/R) FUXIN
N-Channel SMD MOSFET ESD Protection 60V 0.34A Equivalent: 2N7002DWH6327XTSA1;
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In stock:
3000 pcs. |
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Packaging: 3000 Quantity (multiple 1) |
N-MOSFET | 60V | 20V | 5,3Ohm | 340mA | 150mW | SMD | -55°C ~ 150°C | SOT363 | FUXIN | |||||||||||||
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IRF7201TRPBF SOP8 VBSEMI
Transistor N-Channel MOSFET; 30V; 20V; 11mOhm; 9A; 2,2W; -55°C ~ 150°C; Equivalent: IRF7201PBF; IRF7201TRPBF; IRF7201PBF-GURT; IRF7201TR(UMW); IRF7201-HXY; IRF7201PBF-HXY;
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In stock:
25 pcs. |
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Packaging: 25 Quantity (multiple 1) |
N-MOSFET | 30V | 20V | 11mOhm | 9A | 2,2W | SMD | -55°C ~ 150°C | SOP08 | VBsemi | |||||||||||||
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Item in delivery
Estimated time: 2026-05-30
Quantity of pieces: 500
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2N7002DW SOT363 RealChip
Tranzystor 2xN-Channel MOSFET; 60V; 60V; 20V; 13,5Ohm; 115mA; 200mW; -55°C ~ 150°C; Equivalent: 2N7002DW-7-F; 2N7002DWH6327XTSA1;
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Manufacturer:
REALCHIP Manufacturer part number: RC7002DW RoHS Case style: SOT363 t/r |
In stock:
3000 pcs. |
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Packaging: 3000 Quantity (multiple 1) |
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BSS138BW SOT323 KINGTRONICS
Transistor N-Channel MOSFET; 60V; 20V; 2Ohm; 320mA; 310mW; -55°C ~ 150°C; Similar to: BSS138PW,115;
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Manufacturer:
KINGTRONICS Manufacturer part number: BSS138 RoHS Case style: SOT323 t/r |
In stock:
3000 pcs. |
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Packaging: 3000 Quantity (multiple 10) |
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MOT4606S SOIC-8 MOT
Transistor N+P-Channel MOSFET; 30V; 20V; 27mOhm; 6,5A/-7A; 2W; -55°C ~ 150°C; LTB:31-JULY-2024; Equivalent: IRFR7404TRPBF; IRF7404PBF; IRF7404PBF-GURT;
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In stock:
600 pcs. |
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Packaging: 600 Quantity (multiple 1) |
N/P-MOSFET | 30V | 20V | 27mOhm | 6,5A | 2W | SMD | -55°C ~ 150°C | SOP08 | MOT | |||||||||||||
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IRLR2705TRPBF MOT
Transistor N-Channel MOSFET; 60V; 20V; 40mOhm; 30A; 50W; -55°C ~ 150°C; Equivalent: IRLR2705PBF; IRLR2705TRPBF; IRLR2705TRLPBF; IRLR2705PBF-GURT; IRLR2705; YFW50N06AD; MOT30N06D; DH300N08D;
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In stock:
500 pcs. |
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Packaging: 500 Quantity (multiple 1) |
N-MOSFET | 60V | 20V | 40mOhm | 30A | 50W | SMD | -55°C ~ 150°C | TO252 (DPACK) | MOT | |||||||||||||
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MOT150N03A TO-220 MOT
Transistor N-Channel MOSFET; 30V; 20V; 4,8mOhm; 150A; 130W; -55°C ~ 175°C; Equivalent: IRL2203N;
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In stock:
200 pcs. |
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Packaging: 50/200 Quantity (multiple 1) |
N-MOSFET | 30V | 20V | 4,8mOhm | 150A | 130W | THT | -55°C ~ 175°C | TO220 | MOT | |||||||||||||
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MOT55N06B TO220 MOT
Transistor N-Channel MOSFET; 60V; 20V; 22mOhm; 55A; 100W; -55°C ~ 150°C; Similar to: FQP50N06; IRLZ44NPBF; STP55NF06;
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In stock:
200 pcs. |
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Packaging: 50/200 Quantity (multiple 1) |
N-MOSFET | 60V | 20V | 22mOhm | 55A | 100W | THT | -55°C ~ 150°C | TO220 | MOT | |||||||||||||
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MOT100N07E D2PAK MOT
Transistor N-Channel MOSFET; 70V; 20V; 6,5mOhm; 100A; 136W; -55°C ~ 150°C; Similar to: IRF3205STRLPBF; PTY12HN06;
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In stock:
107 pcs. |
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Packaging: 107 Quantity (multiple 1) |
N-MOSFET | 70V | 20V | 6,5mOhm | 100A | 136W | SMD | -55°C ~ 150°C | TO263 (D2PAK) | MOT | |||||||||||||
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In stock:
73 pcs. |
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Packaging: 73 Quantity (multiple 1) |
N-MOSFET | 70V | 20V | 6,5mOhm | 100A | 136W | SMD | -55°C ~ 150°C | TO263 (D2PAK) | MOT | |||||||||||||
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YFW100N03AD TO-252 YFW
Transistor N-Channel MOSFET; 30V; 20V; 5,1mOhm; 100A; 85W; -55°C ~ 175°C; Similar to: FDD8896;
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In stock:
300 pcs. |
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Packaging: 300 Quantity (multiple 1) |
N-MOSFET | 30V | 20V | 5,1mOhm | 100A | 85W | SMD | -55°C ~ 175°C | TO252 (DPAK) | YFW | |||||||||||||
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YFW16P02S SOIC-8 YFW
Transistor P-Channel MOSFET; 20V; 12V; 20mOhm; 16A; 10W; -55°C ~ 150°C; LTB:31-JULY-2024; Equivalent: IRFR7404TRPBF; IRF7404PBF; IRF7404PBF-GURT;
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In stock:
200 pcs. |
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Packaging: 200 Quantity (multiple 1) |
P-MOSFET | 20V | 12V | 20mOhm | 16A | 10W | SMD | -55°C ~ 150°C | SOP08 | YFW | |||||||||||||
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SI2323DS-T1-GE3-L SOT23 PIELENST
Transistor P-Channel MOSFET; 20V; 10V; 80mOhm; 4,2A; 1,4W; -55°C ~ 150°C;
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In stock:
600 pcs. |
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Packaging: 600 Quantity (multiple 1) |
P-MOSFET | 20V | 10V | 80mOhm | 4,2A | 1,4W | SMD | -55°C ~ 150°C | SOT23 | PIELENST | |||||||||||||
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2N7002NXAKR SOT-23 TECH PUBLIC
Transistor N-Channel MOSFET; 60V; 20V; 2,5Ohm; 300mA; 350mW; -55°C ~ 150°C;
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In stock:
370 pcs. |
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Packaging: 370 Quantity (multiple 10) |
N-MOSFET | 60V | 20V | 2,5Ohm | 300mA | 350mW | SMD | -55°C ~ 150°C | SOT23 | TECH PUBLIC | |||||||||||||
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In stock:
230 pcs. |
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Packaging: 230 Quantity (multiple 10) |
N-MOSFET | 60V | 20V | 2,5Ohm | 300mA | 350mW | SMD | -55°C ~ 150°C | SOT23 | TECH PUBLIC | |||||||||||||
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BSS138 SOT23-3(T/R) FUXIN
Tranzystor N-Channel MOSFET; 50V; 20V; 6Ohm; 220mA; 350mW; -55°C ~ 150°C; BSS138-TP-ES; BSS138-TP;
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In stock:
3000 pcs. |
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Packaging: 3000 Quantity (multiple 10) |
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Field effect transistors for analog and digital circuits
At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.
How are field effect transistors constructed?
Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:
- Crystal
- First electrode
- Second electrode
- Gate
Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.
How do field effect transistors work?
It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.
Field effect transistors catalogue - what is the choice?
Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:
- P-FET
- J-FET
- MOSFET
Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit.
Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.