BSC030N04NSGATMA1 transistor from Infineon Technologies

2020-11-04

The Micros offer has been extended with BSC030N04NSGATMA1 transistor from Infineon Technologies.
BSC030N04NSGATMA1 is an 8-pin unipolar transistor of the N-MOSFET type. It was made
in OptiMOS ™ 3 technology. It is characterized by high performance, flexibility, thermal resistance, excellent ratio of gate charge and R DS(on) value and very low conductive resistance. It is used for switch power supplies. The product available in the TDSON housing is designed for surface mounting. The value of the maximum drain-source voltage is 40V. The maximum dissipated power is 83W. The transistor works at a temperature from -55°C to +150°C.

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