FRAM memories from SMART MEMORIES

What is FRAM?
FRAM (Ferroelectric RAM) is a non-volatile memory that combines some advantages of DRAM (fast read/write) and EEPROM/Flash (data retention after power loss).
In practice:
- No write-delay – very fast write times, no “programming/locking” procedures as in Flash
- Very high number of write/read cycles (often billions)
- Low power consumption, good temperature endurance
FRAM is often used where EEPROM/Flash cannot handle a high number of write cycles or where fast writes of small data portions are required.
FRAM vs EEPROM/Flash
Unlike Flash, EEPROM, or DRAM, the FRAM market is relatively niche. The reasons are both technological and market-related. FRAM manufacturing technology is difficult and expensive. FRAM uses ferroelectric layers, which require a different technological process than classical CMOS used in DRAM/Flash. Additionally, ferroelectric materials are harder to integrate with other semiconductor structures. The mass market chose Flash and EEPROM because they are cheaper per bit, even though they have much worse parameters (slow writes, limited cycle endurance).
FRAM scales much worse than Flash. Current FRAM devices usually range from a few hundred kilobits to several megabits, while Flash easily offers gigabits. This limits applications – FRAM is more suitable as “working memory” (logs, parameters, configuration) rather than mass data storage. Furthermore, for many years most key patents belonged to companies such as Ramtron (later acquired by Cypress and then Infineon) and Fujitsu, which limited competition.
FRAM memories are valued in applications such as energy meters, medical equipment, automotive systems (black boxes), and battery-powered IoT devices – anywhere reliability, endurance, and fast writing matter and where EEPROM/Flash is not sufficient.
SMART MEMORIES – a smart choice for your budget.
Wuxi Smart Memories is a rapidly growing Chinese company specializing in modern FRAM memory production. Combining many years of engineering experience with access to cutting-edge semiconductor technologies, Smart Memories delivers solutions characterized by exceptional durability, speed, and energy efficiency.
FRAM technology was originally developed by Ramtron and was protected by patents for many years, making it available only from a few manufacturers. Today, however, the fundamental patents have expired, opening the market to new suppliers.
Thanks to this, Smart Memories can legally offer its own FRAM chips, ensuring full legal compliance and high manufacturing quality.
It is worth noting that Chinese companies are increasingly present in the semiconductor industry. They no longer focus solely on simple components such as diodes or transistors – they are also entering advanced technology sectors previously dominated by global players. Smart Memories is an excellent example of such a “Chinese ace,” offering products that stand out with competitiveness, innovation, and reliability.
Micros is the company introducing Smart Memories to the market, demonstrating its unique ability to source high-quality, high-potential products from China. Thanks to Micros, customers gain access to modern FRAM memory significantly cheaper than their Cypress (Infineon) counterparts while maintaining full compatibility and reliability. This makes them a perfect cost-efficient alternative, allowing projects to significantly reduce budget demands without technological compromise.
Smart Memories products are used across a wide range of industries – from industrial and automotive, through automation and energy, to medical and IoT applications. Reliability, low power consumption, and an almost unlimited number of write cycles make these FRAM chips a natural choice wherever traditional EEPROM or Flash cannot meet the requirements.
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|
Symbol |
Capacity |
Interface |
Interface clock frequency |
Power supply voltage |
Operating temperature |
Equivalent for: |
|
|
64Kbit (x 8-bit) |
TWI |
1MHz |
1,7~5,5V |
-40~85°C |
FM24C64B, FM24CL64B |
|
|
512Kbit (x 8-bit) |
TWI |
1MHz |
1,7~5,5V |
-40~85°C |
FM24C512 |
|
|
128Kbit (x 8-bit) |
SPI |
25MHz |
2,7~3,6V |
-40~85°C |
FM25V01, FM25V01A |
|
|
2Mbit (x 8-bit) |
SPI |
25MHz |
1,8~3,6V |
-40~85°C |
FM25V20, FM25V20A |
Table 1. FRAM memories from SMART MEMORIES offered by Micros