2N5551
Symbol Micros:
T2N5551
Case : TO92
NPN 600mA 160V 625mW
Parameters
| Power dissipation: | 630mW |
| Manufacturer: | DISCRETE SEMICONDUCTORS |
| Current gain factor: | 250 |
| Case: | TO92 |
| Cutoff frequency: | 300MHz |
| Max. collector current: | 300mA |
| Max collector-emmiter voltage: | 160V |
Item in delivery
Estimated date:
2026-05-30
Quantity of pcs.: 5000
| Power dissipation: | 630mW |
| Manufacturer: | DISCRETE SEMICONDUCTORS |
| Current gain factor: | 250 |
| Case: | TO92 |
| Cutoff frequency: | 300MHz |
| Max. collector current: | 300mA |
| Max collector-emmiter voltage: | 160V |
| Operating temperature (range): | -65°C ~ 150°C |
| Transistor type: | NPN |
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