2SK3878 TOSHIBA

Symbol Micros: T2SK3878
Contractor Symbol:
Case : TO 3P
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Transistor N-Channel MOSFET; 900V; 900V; 30V; 1,3Ohm; 9A; 150W; -55°C ~ 150°C; 2SK3878(F); 2SK3878(STA1,E,S); TSA9N90M; TSA9N9OM; 2SK3878(STA1.E.S); podobny do STW11NK100Z;
Parameters
Open channel resistance: 1,3Ohm
Max. drain current: 9A
Max. power loss: 150W
Case: TO 3P
Manufacturer: TOSHIBA
Max. drain-source voltage: 900V
Max. drain-gate voltage: 900V
Manufacturer:: Toshiba Manufacturer part number: 2SK3878(STA1,E,S) RoHS Case style: TO 3P Datasheet
In stock:
222 pcs.
Quantity of pcs. 1+ 5+ 25+ 100+ 200+
Net price (EUR) 2,5621 2,1100 1,9222 1,8503 1,8294
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Packaging:
25
         
 
Item in delivery
Estimated date:
2026-12-15
Quantity of pcs.: 500
Open channel resistance: 1,3Ohm
Max. drain current: 9A
Max. power loss: 150W
Case: TO 3P
Manufacturer: TOSHIBA
Max. drain-source voltage: 900V
Max. drain-gate voltage: 900V
Max. gate-source Voltage: 30V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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