AO3400 HXY MOSFET

Symbol Micros: TAO3400 HXY
Contractor Symbol:
Case : SOT23
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Transistor N-Channel MOSFET; 30V; 12V; 55mOhm; 5,8A; 1,4W; -55°C ~ 150°C; Equivalent: AO3400 Alpha&Omega Semiconductor AOS;
Parameters
Open channel resistance: 55mOhm
Max. drain current: 5,8A
Max. power loss: 1,4W
Case: SOT23
Manufacturer: HXY MOSFET
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Manufacturer:: HXY MOSFET Manufacturer part number: AO3400-HXY RoHS Case style: SOT23t/r Datasheet
In stock:
800 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1928 0,0977 0,0592 0,0470 0,0428
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Packaging:
3000
Open channel resistance: 55mOhm
Max. drain current: 5,8A
Max. power loss: 1,4W
Case: SOT23
Manufacturer: HXY MOSFET
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 12V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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