BCV48 JGSEMI
Symbol Micros:
TBCV48 JGS
Case : SOT89
Transistor Darlington PNP; 10000; 500mW; 100V; 2A; 50MHz; -55°C ~ 150°C; Equivalent: BCV48,115; BCV48E6327HTSA1; BCV48H6327XTSA1; BCV48TA;
Parameters
| Power dissipation: | 500mW |
| Manufacturer: | JGSEMI |
| Case: | SOT89 |
| Current gain factor: | 10000 |
| Cutoff frequency: | 50MHz |
| Max. collector current: | 2A |
| Max collector-emmiter voltage: | 100V |
| Power dissipation: | 500mW |
| Manufacturer: | JGSEMI |
| Case: | SOT89 |
| Current gain factor: | 10000 |
| Cutoff frequency: | 50MHz |
| Max. collector current: | 2A |
| Max collector-emmiter voltage: | 100V |
| Operating temperature (range): | -55°C ~ 150°C |
| Transistor type: | Darlington PNP |
Add Symbol
Cancel
All Contractor Symbols