BSS123 HXY MOSFET

Symbol Micros: TBSS123 HXY
Contractor Symbol:
Case : SOT23
Technical drawing Add to favourites
Transistor N-Channel MOSFET; 100V; 20V; 9Ohm; 170mA; 350mW; -55°C ~ 150°C; Equivalent: BSS123,215; BSS123LT1G; BSS123LT3G; BSS123LT7G; BSS123NH6327XTSA1; BSS123NH6433XTMA1; BSS123-7-F; BSS123-TP;
Parameters
Open channel resistance: 9Ohm
Max. drain current: 170mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: HXY MOSFET
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 9Ohm
Max. drain current: 170mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: HXY MOSFET
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols