BSS159N HXY MOSFET

Symbol Micros: TBSS159n HXY
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Case : SOT23
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Transistor N-Channel MOSFET; 60V; 20V; 3Ohm; 300mA; 350mW; -55°C ~ 150°C; Equivalent: BSS159N E6327; BSS159N E6906; BSS159NH6327XTSA1; BSS159NH6327XTSA2; BSS159NH6906XTSA1;
Parameters
Open channel resistance: 3Ohm
Max. drain current: 300mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: HXY MOSFET
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: HXY MOSFET Manufacturer part number: BSS159N-HXY RoHS Case style: SOT23t/r Datasheet
In stock:
3000 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1938 0,0919 0,0518 0,0392 0,0352
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Packaging:
3000
Open channel resistance: 3Ohm
Max. drain current: 300mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: HXY MOSFET
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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