DMG1012T-7
Symbol Micros:
TDMG1012T-7
Case : SOT523
N-MOSFET 20V; 0.45A; 0.28W; 2kV; -55..+150°C
Parameters
| Open channel resistance: | 700mOhm |
| Max. power loss: | 280mW |
| Max. drain current: | 630mA |
| Case: | SOT523 |
| Manufacturer: | DIODES |
| Max. drain-source voltage: | 20V |
| Transistor type: | N-MOSFET |
| Open channel resistance: | 700mOhm |
| Max. power loss: | 280mW |
| Max. drain current: | 630mA |
| Case: | SOT523 |
| Manufacturer: | DIODES |
| Max. drain-source voltage: | 20V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 6V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
Equivalents
Manufacturer::
HXY MOSFET
Manufacturer part number:
DMG1012T-7 RoHS
Case style:
SOT523
In stock
3000 pcs.
| Quantity of pcs. | 5+ | 20+ | 100+ | 500+ | 3000+ |
| Net price (EUR) | 0,1258 | 0,0578 | 0,0314 | 0,0236 | 0,0210 |
Packaging: 3000
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