EL357N(C)(TA) 4SMD
Symbol Micros:
OOPC357n3t EVL
Case : SOIC04
single CTR 200-400% Vce 80V Uiso 3,75kV NPN Phototransistor
Parameters
CTR: | 200-400% |
Case: | SOIC04 |
Output type: | NPN Phototransistor |
Insulation breakdown voltage: | 3750V |
Output voltage: | 80V |
Item in delivery
Estimated date:
2024-05-15
Quantity of pcs.: 6000
CTR: | 200-400% |
Case: | SOIC04 |
Output type: | NPN Phototransistor |
Insulation breakdown voltage: | 3750V |
Output voltage: | 80V |
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