FDN338P JSMICRO
Symbol Micros:
TFDN338p JSM
Case : SOT23
Transistor P-Channel MOSFET; 20V; 8V; 210mOhm; 1,6A; 350mW; -55°C ~ 150°C; Equivalent: FDN338P Onsemi;
Parameters
| Open channel resistance: | 210mOhm |
| Max. drain current: | 1,6A |
| Max. power loss: | 350mW |
| Case: | SOT23 |
| Manufacturer: | JSMICRO |
| Max. drain-source voltage: | 20V |
| Max. gate-source Voltage: | 8V |
| Open channel resistance: | 210mOhm |
| Max. drain current: | 1,6A |
| Max. power loss: | 350mW |
| Case: | SOT23 |
| Manufacturer: | JSMICRO |
| Max. drain-source voltage: | 20V |
| Max. gate-source Voltage: | 8V |
| Transistor type: | P-MOSFET |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
Equivalents
Manufacturer::
ON-Semiconductor
Manufacturer part number:
FDN338P RoHS
Case style:
SSOT3
In stock
3000 pcs.
| Quantity of pcs. | 3+ | 20+ | 100+ | 300+ | 1000+ |
| Net price (EUR) | 0,3054 | 0,1681 | 0,1323 | 0,1224 | 0,1174 |
Packaging: 3000
Quantity (multiple 1)
Manufacturer::
UMW
Manufacturer part number:
FDN338P RoHS
Case style:
SOT23t/r
In stock
3000 pcs.
| Quantity of pcs. | 5+ | 20+ | 100+ | 500+ | 3000+ |
| Net price (EUR) | 0,1959 | 0,0930 | 0,0524 | 0,0397 | 0,0356 |
Packaging: 3000
Quantity (multiple 1)
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