FOD817AS
Symbol Micros:
OOPC817as FAI
Case : PDIP04smd
Single-Channel CTR 80-160% Vce 70V Uiso 5,0kV NPN Phototransistor FOD817ASD
Parameters
| Case: | PDIP04smd |
| CTR: | 80-160% |
| Insulation breakdown voltage: | 5000V |
| Output type: | NPN Phototransistor |
| Output voltage [V]: | 70V |
Manufacturer:: ON-Semiconductor
Manufacturer part number: FOD817AS RoHS
Case style: PDIP04smd
Datasheet
In stock:
205 pcs.
| Quantity of pcs. | 5+ | 20+ | 100+ | 200+ | 1000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,3070 | 0,1676 | 0,1099 | 0,0992 | 0,0875 |
Manufacturer:: ON-Semiconductor
Manufacturer part number: FOD817AS
Case style: PDIP04smd
External warehouse:
10000 pcs.
| Quantity of pcs. | 2000+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,0875 |
| Case: | PDIP04smd |
| CTR: | 80-160% |
| Insulation breakdown voltage: | 5000V |
| Output type: | NPN Phototransistor |
| Output voltage [V]: | 70V |
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