FOD817BS

Symbol Micros: OOPC817bs FAI
Contractor Symbol:
Case : PDIP04smd
Single-Channel CTR 130-360% Vce 70V Uiso 5,0kV NPN Phototransistor FOD817BSD
Parameters
CTR: 130-260%
Case: PDIP04smd
Output type: NPN Phototransistor
Insulation breakdown voltage: 5000V
Output voltage: 70V
Manufacturer:: ON-Semicoductor Manufacturer part number: FOD817BS RoHS Case style: PDIP04smd Datasheet
In stock:
80 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2707 0,1438 0,1116 0,1029 0,0986
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Packaging:
100
CTR: 130-260%
Case: PDIP04smd
Output type: NPN Phototransistor
Insulation breakdown voltage: 5000V
Output voltage: 70V