FQP50N06

Symbol Micros: TFQP50n06

21021

TFQP50n06

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Case : TO220

Datasheet

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N-MOSFET 50A 60V 120W 0.022Ω

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Parameters

Open channel resistance:	22mOhm
Max. drain current:	50A
Max. power loss:	120W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FQP50N06 RoHS Case style: TO220  

In stock:

20 pcs.

Quantity of pcs.	1+	5+	50+	100+	500+
Net price (EUR)	1,1832	0,7864	0,6080	0,5869	0,5634

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Packaging:
50/100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	22mOhm
Max. drain current:	50A
Max. power loss:	120W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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FQP50N06 JSMICRO

Symbol Micros: FQP50N06 JSMICRO Info Add to favourites Equivalents

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