FQP50N06

Symbol Micros: TFQP50n06
Contractor Symbol:
Case : TO220
N-MOSFET 50A 60V 120W 0.022Ω
Parameters
Open channel resistance: 22mOhm
Max. drain current: 50A
Max. power loss: 120W
Case: TO220
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Max. gate-source Voltage: 25V
Manufacturer:: ON-Semiconductor Manufacturer part number: FQP50N06 RoHS Case style: TO220  
In stock:
80 pcs.
Quantity of pcs. 1+ 5+ 50+ 200+ 400+
Net price (EUR) 1,1481 0,7631 0,5877 0,5558 0,5467
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Packaging:
50/200
Open channel resistance: 22mOhm
Max. drain current: 50A
Max. power loss: 120W
Case: TO220
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Max. gate-source Voltage: 25V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 175°C
Mounting: THT