GT700P08D3

Symbol Micros: GT700P08D3 GO

397097

GT700P08D3 GO

Contractor Symbol:

Case : DFN08(3x3)

Datasheet

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Transistor MOSFET; DFN3*3-8L; P-Channel; NO ESD; -80V; -16A; 69W; -2.5V; 57mΩ

Parameters

Open channel resistance:	75mOhm
Max. drain current:	16A
Max. power loss:	69W
Case:	DFN08(3x3)
Manufacturer:	Goford
Max. drain-source voltage:	80V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	75mOhm
Max. drain current:	16A
Max. power loss:	69W
Case:	DFN08(3x3)
Manufacturer:	Goford
Max. drain-source voltage:	80V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-50°C ~ 150°C
Mounting:	SMD

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