HIRF530NPBF HXY MOSFET

Symbol Micros: TIRF530n HXY
Contractor Symbol:
Case : TO220
Transistor N-Channel MOSFET; 100V; 20V; 120mOhm; 17A; -55°C ~ 150°C; Equivalent: IRF530PBF; IRF530PBF-BE3; IRF530NPBF; SP001570120;
Parameters
Open channel resistance: 120mOhm
Max. drain current: 17A
Case: TO220
Manufacturer: HXY MOSFET
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Manufacturer:: HXY MOSFET Manufacturer part number: HIRF530NPBF RoHS Case style: TO220 Datasheet
In stock:
200 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,5830 0,3526 0,2703 0,2445 0,2327
Add to comparison tool
Packaging:
50/200
Open channel resistance: 120mOhm
Max. drain current: 17A
Case: TO220
Manufacturer: HXY MOSFET
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT