IRF3710S

Symbol Micros: TIRF3710s
Contractor Symbol:
Case : TO263 (D2PAK)
Transistor N-Channel MOSFET; 100V; 20V; 23mOhm; 57A; 200W; -55°C ~ 175°C;
Parameters
Open channel resistance: 23mOhm
Max. drain current: 57A
Max. power loss: 200W
Case: TO263 (D2PAK)
Manufacturer: International Rectifier
Max. drain-source voltage: 100V
Max. gate-source Voltage: 20V
Manufacturer:: Infineon Manufacturer part number: IRF3710STRLPBF RoHS Case style: TO263t/r (D2PAK)  
In stock:
284 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 400+
Net price (EUR) 1,1325 0,7941 0,6744 0,6169 0,5962
Add to comparison tool
Packaging:
800
Manufacturer:: Infineon Manufacturer part number: IRF3710STRLPBF Case style: TO263 (D2PAK)  
External warehouse:
1830 pcs.
Quantity of pcs. 10+ (Please wait for the order confirmation)
Net price (EUR) 0,8148
Add to comparison tool
Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IRF3710STRLPBF Case style: TO263 (D2PAK)  
External warehouse:
10400 pcs.
Quantity of pcs. 800+ (Please wait for the order confirmation)
Net price (EUR) 0,9121
Add to comparison tool
Packaging:
800
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 23mOhm
Max. drain current: 57A
Max. power loss: 200W
Case: TO263 (D2PAK)
Manufacturer: International Rectifier
Max. drain-source voltage: 100V
Max. gate-source Voltage: 20V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD