IRF520

Symbol Micros: TIRF520
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Case : TO220
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N-MOSFET 9.2A 100V 60W 0.27Ω
Parameters
Open channel resistance: 270mOhm
Max. drain current: 9,2A
Max. power loss: 60W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 100V
Max. gate-source Voltage: 20V
         
 
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Open channel resistance: 270mOhm
Max. drain current: 9,2A
Max. power loss: 60W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 100V
Max. gate-source Voltage: 20V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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