Main page / Transistors / Unipolar Transistors / IRF7306TRPBF

IRF7306TRPBF

Symbol Micros: TIRF7306

Case : SOP08

Transistor 2xP-Channel MOSFET; 30V; 20V; 160mOhm; 3,6A; 2W; -55°C ~ 150°C; Replacement: IRF7306PBF (SPQ95); IRF7306TRPBF (4K/REEL); IRF7306; IRF7306PBF-GURT; IRF7306; IRF7306TRPBF;

Parameters

Open channel resistance:	160mOhm
Max. drain current:	3,6A
Max. power loss:	2W
Case:	SOP08
Manufacturer:	International Rectifier
Max. drain-source voltage:	30V
Transistor type:	2xP-MOSFET

Manufacturer:: Infineon Manufacturer part number: IRF7306TRPBF RoHS Case style: SOP08t/r

In stock:

3652 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,6311	0,4012	0,3167	0,2886	0,2745

Manufacturer:: Infineon Manufacturer part number: IRF7306TRPBF Case style: SOP08

External warehouse:

4750 pcs.

Quantity of pcs.	50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,3035

Manufacturer:: Infineon Manufacturer part number: IRF7306TRPBF Case style: SOP08

External warehouse:

60000 pcs.

Quantity of pcs.	4000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2745

Parameters
Description

Open channel resistance:	160mOhm
Max. drain current:	3,6A
Max. power loss:	2W
Case:	SOP08
Manufacturer:	International Rectifier
Max. drain-source voltage:	30V
Transistor type:	2xP-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

Detailed description

Manufacturer: International Rectifier
Transistor Type: P-MOSFET x2
Polarization: unipolar
Transistor Style: HEXFET
Drain-Source Voltage: -30V
Drain Current: -3.6A
Power: 2W
Package: SO8
Gate-Source Voltage: 20V
On-State Resistance: 160mΩ
Thermal Resistance Junction-to-Ambient: 62.5K/W
Mounting: SMD
Gate Charge: 16.7nC

IRF7306TRPBF

Edit Symbol

Delete associated with Contractor Symbol

Add Symbol