IRF7306TRPBF
Symbol Micros:
TIRF7306
Case : SOP08
Transistor 2xP-Channel MOSFET; 30V; 20V; 160mOhm; 3,6A; 2W; -55°C ~ 150°C; Replacement: IRF7306PBF (SPQ95); IRF7306TRPBF (4K/REEL); IRF7306; IRF7306PBF-GURT; IRF7306; IRF7306TRPBF;
Parameters
| Open channel resistance: | 160mOhm |
| Max. drain current: | 3,6A |
| Max. power loss: | 2W |
| Case: | SOP08 |
| Manufacturer: | International Rectifier |
| Max. drain-source voltage: | 30V |
| Transistor type: | 2xP-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: IRF7306TRPBF RoHS
Case style: SOP08t/r
In stock:
3752 pcs.
| Quantity of pcs. | 2+ | 10+ | 50+ | 200+ | 1000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,6283 | 0,3994 | 0,3153 | 0,2873 | 0,2733 |
| Open channel resistance: | 160mOhm |
| Max. drain current: | 3,6A |
| Max. power loss: | 2W |
| Case: | SOP08 |
| Manufacturer: | International Rectifier |
| Max. drain-source voltage: | 30V |
| Transistor type: | 2xP-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
Detailed description
Manufacturer: International Rectifier
Transistor Type: P-MOSFET x2
Polarization: unipolar
Transistor Style: HEXFET
Drain-Source Voltage: -30V
Drain Current: -3.6A
Power: 2W
Package: SO8
Gate-Source Voltage: 20V
On-State Resistance: 160mΩ
Thermal Resistance Junction-to-Ambient: 62.5K/W
Mounting: SMD
Gate Charge: 16.7nC
Equivalents
Manufacturer::
JSMSEMI
Manufacturer part number:
IRF7306TRPBF RoHS
Case style:
SOP08t/r
In stock
200 pcs.
| Quantity of pcs. | 2+ | 10+ | 50+ | 200+ | 1000+ |
| Net price (EUR) | 0,4975 | 0,3013 | 0,2312 | 0,2086 | 0,1985 |
Packaging: 200
Quantity (multiple 1)
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