IRF740 HXY MOSFET

Symbol Micros: TIRF740 HXY
Contractor Symbol:
Case : TO220
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Transistor N-Channel MOSFET; 420V; 30V; 500mOhm; 11A; 87W; -55°C ~ 150°C; Equivalent: IRF740PBF; IRF740PBF-BE3;
Parameters
Open channel resistance: 500mOhm
Max. drain current: 11A
Max. power loss: 87W
Case: TO220
Manufacturer: HXY MOSFET
Max. drain-source voltage: 420V
Transistor type: N-MOSFET
Manufacturer:: HXY MOSFET Manufacturer part number: IRF740 RoHS Case style: TO220 Datasheet
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 50+ 100+ 400+
Net price (EUR) 0,8448 0,5309 0,4155 0,3924 0,3670
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Packaging:
50/100
Open channel resistance: 500mOhm
Max. drain current: 11A
Max. power loss: 87W
Case: TO220
Manufacturer: HXY MOSFET
Max. drain-source voltage: 420V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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